File:Schottky barrier vs. electronegativity.PNG: Difference between revisions

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({{Image_Details|user-pd |description = Schottky barrier height on n-type Si vs. metal electronegativity for different metals |author = ~~~ |date-created = 2011-02-06 |pub-country = USA |notes = Patterned after Figure 19.18 in {{cite book |title=Semiconductor Surfaces and Interfaces |author=Winfried Mönch |pages=p. 412 |chapter=Figure 19.18 |isbn=3540679022 |edition=3rd ed |publisher=Springer |year=2001}} The different barrier heights for the same metal correspond to different i...)
 
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== Summary ==
== Summary ==
{{Image_Details|user-pd
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|description  = Schottky barrier height on n-type Si vs. metal electronegativity for different metals
|author      = [[User:John R. Brews|John R. Brews]]
|date-created = 2011-02-06
|pub-country  = USA
|notes        = Patterned after Figure 19.18 in {{cite book |title=Semiconductor Surfaces and Interfaces |author=Winfried Mönch |pages=p. 412 |chapter=Figure 19.18 |isbn=3540679022 |edition=3rd ed |publisher=Springer |year=2001}} The different barrier heights for the same metal correspond to different interface structures. The solid line is the theoretical result based upon metal induced gap states (MIGS).
|versions    =
}}
== Licensing/Copyright status ==
{{CC|zero|1.0}}

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