File:Schottky barrier on p-SiC.PNG: Difference between revisions

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== Summary ==
== Summary ==
{{Image_Details|user-pd
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|description  = Theoretical Schottky barrier height on ''p''-SiC vs. metal electronegativity
|author      = [[User:John R. Brews|John R. Brews]]
|date-created = 2011-02-09
|pub-country  = USA
|notes        = Patterned after {{cite book |title=Silicon carbide: recent major advances |author=Winfried Mönch |editor=W. J. Choyke, Hiroyuki Matsunami, Gerhard Pensl, eds|url=http://books.google.com/books?id=mLBmKotEe9cC&pg=PA333 |pages=p. 333 |chapter=Figure 9 |isbn=3540404589  |publisher=Springer |year=2004}} The different barrier heights for the same metal correspond to different interface structures. The solid line is the theoretical result based upon metal induced gap states (MIGS).
|versions    =
}}
 
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